Bilayer barrier for interconnect and memory structures formed in the BEOL

ABSTRACT

An interconnect or memory structure is provided that includes a first electrically conductive structure having a concave upper surface embedded in a first interconnect dielectric material layer. A first metal-containing cap contacts the concave upper surface of the first electrically conductive structure. The first metal-containing cap has a topmost surface that is coplanar with a topmost surface of the first interconnect dielectric material layer. A second metal-containing cap having a planar bottommost surface contacts the topmost surface of the first metal-containing cap. A metal-containing structure having a planar bottommost surface contacts a planar topmost surface of the second metal-containing cap. A second electrically conductive structure contacts a planar topmost surface of the metal-containing structure, and a second interconnect dielectric material layer is present on the first interconnect dielectric material layer and is located laterally adjacent to second metal-containing cap, the metal-containing structure, and the second electrically conductive structure.

BACKGROUND

The present application relates to back-end-of-the-line (BEOL)technology, and more particularly to an interconnect structure or amemory structure that is formed in the BEOL.

One challenge in forming interconnect structures or memory structures inthe BEOL is that various amounts of recessing of the electricallyconductive structures located in the same interconnect level typicallyoccurs. Such recessing can lead to topography issues within theinterconnect structures or memory structures that are formed in theBEOL. One example is the variation on depth of focus in opticallithography. Another example is an undesired embedded film postplanarization. A further example is that a flat and smooth surface isrequired as a foundation/substrate prior to memory stack deposition forperformance and yield control. There is a need to address thistopography issue in providing interconnect structures or memorystructures in the BEOL.

SUMMARY

In one aspect of the present application, a structure (i.e., aninterconnect structure or a memory structure) is formed in the BEOL. Inone embodiment, the structure includes a first electrically conductivestructure having a concave upper surface embedded in a firstinterconnect dielectric material layer. A first metal-containing caphaving a convex bottom surface directly contacts the concave uppersurface of the first electrically conductive structure. The firstmetal-containing cap has a topmost surface that is coplanar with atopmost surface of the first interconnect dielectric material layer. Asecond metal-containing cap having a planar bottommost surface directlycontacts the topmost surface of the first metal-containing cap. Ametal-containing structure having a planar bottommost surface directlycontacts a planar topmost surface of the second metal-containing cap. Asecond electrically conductive structure contacts a planar topmostsurface of the metal-containing structure, and a second interconnectdielectric material layer is present on the first interconnectdielectric material layer and is located laterally adjacent to secondmetal-containing cap, the metal-containing structure, and the secondelectrically conductive structure. Collectively, the first and secondmetal-containing caps provide a bilayer barrier for the metal-containingstructure.

In another aspect of the present application, a method of forming astructure i.e., an interconnect structure or a memory structure, in theBEOL is provided. In one embodiment, the method includes forming a firstelectrically conductive structure having a concave upper surface andembedded in a first interconnect dielectric material layer. A firstmetal-containing cap is then formed on the concave upper surface of thefirst electrically conductive structure, wherein the firstmetal-containing cap has a topmost surface that is coplanar with atopmost surface of the first interconnect dielectric material layer. Asecond metal-containing cap layer is then formed on the firstmetal-containing cap and the topmost surface of the first interconnectdielectric material layer. Next, a metal-containing layer is formed on aplanar topmost surface of the second metal-containing cap layer. Themetal-containing layer and the second metal-containing cap layer arethen patterned to provide a patterned structure that includes aremaining portion of the metal-containing layer and a remaining portionof the second metal-containing cap layer on the topmost surface of thefirst metal-containing cap. A second interconnect dielectric materiallayer is then formed laterally adjacent to, and atop, the patternedstructure. Next, a second electrically conductive structure is formed inthe second interconnect dielectric material layer, wherein the secondelectrically conductive structure contacts the patterned structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view of an exemplary structure that can beemployed in accordance with an embodiment of the present application andincluding at least one first electrically conductive structure embeddedin a first interconnect dielectric material layer.

FIG. 2 is a cross sectional view of the exemplary structure of FIG. 1after forming a hard mask on a surface of the first interconnectdielectric material layer, wherein the hard mask contains an openingthat physically exposes the at least one first electrically conductivestructure.

FIG. 3 is a cross sectional view of the exemplary structure of FIG. 2after recessing the physically exposed at least one first electricallyconductive structure and removing the hard mask.

FIG. 4 is a cross sectional view of the exemplary structure of FIG. 3after forming a first metal-containing cap layer on the recessed surfaceof the at least one first electrically conductive structure and on atopmost surface of the first interconnect dielectric material layer.

FIG. 5 is a cross sectional view of the exemplary structure of FIG. 4after removing the first metal-containing cap layer from the topmostsurface of the first interconnect dielectric material layer, whilemaintaining a portion of the first metal-containing cap layer on therecessed surface of the at least one first electrically conductivestructure.

FIG. 6 is a cross sectional view of the exemplary structure of FIG. 5after forming a second metal-containing cap layer.

FIG. 7 is a cross sectional view of the exemplary structure of FIG. 6after forming a metal-containing layer on the second metal-containingcap layer.

FIG. 8 is a cross sectional view of the exemplary structure of FIG. 7after patterning the metal-containing layer and the secondmetal-containing cap layer to provide a patterned structure thatincludes a remaining portion of the metal-containing layer and aremaining portion of the second metal-containing cap layer on theremaining portion of the first metal-containing cap layer that ispresent on the recessed surface of the at least one first electricallyconductive structure.

FIG. 9 is a cross sectional view of the exemplary structure of FIG. 8after forming a second interconnect dielectric material layer laterallyadjacent to, and atop, the patterned structure, and forming at least onesecond electrically conductive structure in the second interconnectdielectric material layer, wherein the at least one second electricallyconductive structure contacts the patterned structure.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “beneath” or “under” another element, it can bedirectly beneath or under the other element, or intervening elements maybe present. In contrast, when an element is referred to as being“directly beneath” or “directly under” another element, there are nointervening elements present.

Referring first to FIG. 1, there is illustrated an exemplary structurethat can be employed in accordance with an embodiment of the presentapplication. The exemplary structure of FIG. 1 includes at least onefirst electrically conductive structure 14A embedded in a firstinterconnect dielectric material layer 10. In the embodiment illustratedin FIG. 1, element 14B represents another first electrically conductivestructure that can be embedded in the first interconnect dielectricmaterial layer 10. Although the present application describes andillustrates two first electrically conductive structures (14A, 14B)embedded in the first interconnect dielectric material layer 10, thepresent application contemplates an embodiment in which only one firstelectrically conductive structure (i.e., first electrically conductivestructure 14A) is present in the first interconnect dielectric materiallayer 10 and embodiments in which more than two first electricallyconductive structures are present in the first interconnect dielectricmaterial layer 10.

In some embodiments, and as shown in FIG. 1, a first diffusion barrierliner 12L is located on the sidewalls and bottommost surface of eachfirst electrically conductive structure 14A, 14B. The first electricallyconductive structures 14A, 14B have a topmost surface that is coplanarwith a topmost surface of the first interconnect dielectric materiallayer 10, and if present, a topmost surface of the first diffusionbarrier liner 12L.

Collectively, the first interconnect dielectric material layer 10, thefirst electrically conductive structures 14A, 14B and, if present, thefirst diffusion barrier liner 12L provide a lower (or first)interconnect level, L_(n). In accordance with the present application, nis an integer starting from 1. Although not shown, at least one otherinterconnect level, and/or middle-of-line (MOL) level and/or afront-end-of-the-line structure is(are) located beneath the lower (orfirst) interconnect level, L_(n). The front-end-of-the-line structureincludes a semiconductor substrate that contains a plurality ofsemiconductor devices formed therein or thereupon. The MOL levelincludes an MOL dielectric material having at least one contactstructure formed therein.

The first interconnect dielectric material layer 10 can be composed ofan inorganic dielectric material or an organic dielectric material. Insome embodiments, the first interconnect dielectric material layer 10may be porous. In other embodiments, the first interconnect dielectricmaterial layer 10 may be non-porous. Examples of suitable dielectricmaterials that may be employed as the first interconnect dielectricmaterial layer 10 include, but are not limited to, silicon dioxide,undoped or doped silicate glass, silsesquioxanes, C doped oxides (i.e.,organosilicates) that include atoms of Si, C, O and H, theremosettingpolyarylene ethers or any multilayered combination thereof. The term“polyarylene” is used in this present application to denote arylmoieties or inertly substituted aryl moieties which are linked togetherby bonds, fused rings, or inert linking groups such as, for example,oxygen, sulfur, sulfone, sulfoxide, or carbonyl.

The first interconnect dielectric material layer 10 can have adielectric constant (all dielectric constants mentioned herein aremeasured relative to a vacuum, unless otherwise stated) that is about4.0 or less. In one embodiment, the first interconnect dielectricmaterial layer 10 has a dielectric constant of 2.8 or less. Thesedielectrics generally having a lower parasitic cross talk as compared todielectric materials whose dielectric constant is greater than 4.0.

The first interconnect dielectric material layer 10 can be formed by adeposition process such as, for example, chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECVD) or spin-oncoating. The first interconnect dielectric material layer 10 can have athickness from 50 nm to 250 nm. Other thicknesses that are lesser than50 nm, and greater than 250 nm can also be employed in the presentapplication.

After providing the first interconnect dielectric material layer 10, atleast one opening (not shown) is formed into the first interconnectdielectric material layer 10; each opening will house a firstelectrically conductive structure 14A, 14B and, if present, the firstdiffusion barrier liner 12L. In some embodiments, the at least oneopening in the first interconnect dielectric material layer 10 istypically a via opening. The at least one via opening can be formed bylithography and etching. In other embodiments, the at least one openingthat is formed in the first interconnect dielectric material layer 10 isa line opening. The line opening can be formed by lithography andetching. In yet further embodiments, the at least one opening that isformed in the first interconnect dielectric material layer 10 is acombined via/line opening. The combined via/line opening can be formedutilizing two lithographic and etching steps.

When present, a diffusion barrier material layer is then formed in eachopening and on a topmost surface of the first interconnect dielectricmaterial layer 10. The diffusion barrier material layer can be composedof Ta, TaN, Ti, TiN, Ru, RuN, RuTa, RuTaN, W, WN or any other materialthat can serve as a barrier to prevent a conductive material fromdiffusing there through. The thickness of the diffusion barrier materiallayer can vary depending on the deposition process used as well as thematerial employed. In some embodiments, the diffusion barrier materiallayer may have a thickness from 2 nm to 50 nm; although otherthicknesses for the diffusion barrier material layer are contemplatedand can be employed in the present application as long as the diffusionbarrier material layer does not entirety fill the opening that is formedinto the first interconnect dielectric material layer 10. The diffusionbarrier material layer can be formed by a deposition process including,for example, chemical vapor deposition (CVD), plasma enhanced chemicalvapor deposition (PECVD), atomic layer deposition (ALD), physical vapordeposition (PVD), sputtering, chemical solution deposition or plating.

In some embodiments, an optional plating seed layer (not specificallyshown) can be formed on the surface of the diffusion barrier materiallayer. In some embodiments, the optional plating seed layer is notneeded. The optional plating seed layer is employed to selectivelypromote subsequent electroplating of a pre-selected conductive metal ormetal alloy. The optional plating seed layer may be composed of Cu, a Cualloy, Ir, an Ir alloy, Ru, a Ru alloy (e.g., TaRu alloy) or any othersuitable noble metal or noble metal alloy having a low metal-platingoverpotential. Typically, Cu or a Cu alloy plating seed layer isemployed, when a Cu metal is to be subsequently formed within the atleast one opening. The thickness of the optional plating seed layer mayvary depending on the material of the optional plating seed layer aswell as the technique used in forming the same. Typically, the optionalplating seed layer has a thickness from 2 nm to 80 nm. The optionalplating seed layer can be formed by a conventional deposition processincluding, for example, CVD, PECVD, ALD, or PVD.

Next, an electrically conductive metal or metal alloy layer is formedinto each opening and, if present, atop the diffusion barrier materiallayer. The electrically conductive metal or metal alloy layer providesthe first electrically conductive structures 14A, 14B of the presentapplication. The electrically conductive metal or metal alloy layer canbe composed of copper (Cu), aluminum (Al), tungsten (W), or an alloythereof such as, for example, a Cu—Al alloy. The electrically conductivemetal or metal alloy layer can be formed utilizing a deposition processsuch as, for example, CVD, PECVD, sputtering, chemical solutiondeposition or plating. In one embodiment, a bottom-up plating process isemployed in forming the electrically conductive metal or metal alloylayer. In some embodiments, the electrically conductive metal or metalalloy layer is formed above the topmost surface of the firstinterconnect dielectric material layer 10.

Following the deposition of the electrically conductive metal or metalalloy layer, a planarization process such as, for example, chemicalmechanical polishing (CMP) and/or grinding, can be used to remove allelectrically conductive metal or metal alloy (i.e., overburden material)that is present outside each of the openings forming the firstelectrically conductive structures 14A, 14B. In the illustratedembodiment, the planarization stops on a topmost surface of the firstinterconnect dielectric material layer 10. Thus, and if present, theplanarization process also removes the diffusion barrier material fromthe topmost surface of the first interconnect dielectric material layer10. The remaining portion of the diffusion barrier material layer thatis present in the at least one opening is referred to herein as thefirst diffusion barrier liner 12L, while the remaining electricallyconductive metal or metal alloy layer that is present in the one openingmay be referred to as the first electrically conductive structure 14A,14B.

Referring now to FIG. 2, there is illustrated the exemplary structure ofFIG. 1 after forming a hard mask 16 on a surface of the firstinterconnect dielectric material layer 10, wherein the hard mask 16contains an opening 18 that physically exposes the at least one firstelectrically conductive structure, e.g., first electrically conductivestructure 14A. In the illustrated embodiment, the first electricallyconductive structure 14B that is present in the first interconnectdielectric material layer 10 is not physically exposed. The number ofphysically exposed and non-physically exposed first electricallyconductive structures may vary so long as at least one of the firstelectrically conductive structures, e.g., first electrically conductivestructure 14A, is physically exposed. In some embodiments, to beexplained in greater detail herein below, this step of the presentapplication can be omitted.

When present, hard mask 16 is composed of a hard mask material. The hardmask material that provides hard mask 16 is compositionally differentfrom the interconnect dielectric material that provides the firstinterconnect dielectric material layer 10. Illustrative examples of hardmask materials that provide the hard mask 16 include, but are notlimited to, silicon dioxide, silicon nitride and/or silicon oxynitride.

The hard mask 16 can be formed by first forming a layer of hard maskmaterial, as defined above, on the first interconnect dielectricmaterial layer 10. The layer of hard mask material is a continuous layerthat covers the entirety of the first interconnect dielectric materiallayer 10 including the first electrically conductive structures 14A, 14Band, if present, the first diffusion barrier liners 12L. The layer ofhard mask material can be formed utilizing a deposition process such as,for example, chemical vapor deposition (CVD), plasma enhanced chemicalvapor deposition (PECVD), or physical vapor deposition (PVD). The layerof hard mask material can have a thickness from 20 nm to 200 nm.Although thicknesses for the layer of hard mask material arecontemplated and can be used in the present application as the thicknessof the layer of hard mask material.

The layer of hard mask material is then patterned by lithography andetching to provide opening 18 that physically exposes the at least onefirst electrically conductive structure, e.g., first electricallyconductive structure 14A.

Referring now to FIG. 3, there is illustrated the exemplary structure ofFIG. 2 after recessing the physically exposed at least one firstelectrically conductive structure (e.g., first electrically conductivestructure 14A) and removing the hard mask 16. The recessing may beperformed utilizing an etching process that is selective in removing theelectrically conductive metal or metal alloy that provides thephysically exposed first electrically conductive structure (e.g., firstelectrically conductive structure 14A). The recessing provides arecessed surface 15 to the physically exposed at least one firstelectrically conductive structure (e.g., first electrically conductivestructure 14A); the non-recessed first electrically conductivestructures (e.g., first electrically conductive structure 14B) do notcontain the recessed surface.

The recessed surface 15 of the physically exposed at least one firstelectrically conductive structure (e.g., first electrically conductivestructure 14A) is a concave upper surface (that is the upper surface ofthe recessed bottom electrode 14A curves inward to provide a firstelectrically conductive structure 14A that is thinner in the middle thanon the edges) as shown in FIG. 3, while the non-recessed firstelectrically conductive structures (e.g., first electrically conductivestructure 14B) maintain a planar topmost surface.

In some embodiments, and during the removal of the overburdenedconductive metal or metal alloy that provides the first electricallyconductive structures 14A, 14B, the planarization process itself canprovide the recessed surface 15 (i.e., the concave upper surface) shownin FIG. 3. In such an embodiment, the at least one least one firstelectrically conductive structure (e.g., first electrically conductivestructure 14A) that is to be recessed is connected to a largeelectrically conductive pad of the front-end-of-the-line structure;first electrically conductive structure 14B is floating (not connectedto an electrically conductive pad of the front-end-of-the-linestructure) in the illustrated embodiment. The first electricallyconductive structures (e.g., first electrically conductive structure14A) that are connected to the underlying circuitry are recessed by theplanarization process that removes the overburdened electricallyconductive metal or metal alloy, while the first electrically conductivestructures that are floating are not recessed by the planarizationprocess that removes the overburdened electrically conductive metal ormetal alloy.

Referring now to FIG. 4, there is illustrated the exemplary structure ofFIG. 3 after forming a first metal-containing cap layer 20L on therecessed surface 15 of the at least one first electrically conductivestructure (e.g., first electrically conductive structure 14A) and on atopmost surface of the first interconnect dielectric material layer 10;the first metal-containing cap layer 20L is also present on the planartopmost surface of each non-recessed first electrically conductivestructure (e.g., first electrically conductive structure 14B). As isshown in FIG. 4, the first metal-containing cap layer 20L directlycontacts the recessed surface 15 (i.e., concave upper surface) of the atleast one first electrically conductive structure (e.g., firstelectrically conductive structure 14A), the topmost surface of the firstinterconnect dielectric material layer 10, and the planar topmostsurface of the non-recessed first electrically conductive structure(e.g., first electrically conductive structure 14B).

The first metal-containing cap layer 20L is composed of a metal such as,for example, Ta, Ti, W, Co, Ru, or Rh, a metal nitride such as, forexample, TaN, TiN, WN, CoN, RuN or RhN, or alloys of said metals (e.g.,Ta and one of Ti, W, Co, Ru, or Rh; Ti and one of Ta, W, Co, Ru, or Rh;W and one of Ta, Ti, Co, Ru or Rh; Co and one of Ta, Ti, W, Ru or Rh; Ruand one of Ta, Ti, W, Co, or Rh; of Rh and one of Ta, Ti, W, Co, or Ru).The first metal-containing cap layer 20L is compositionally differentfrom the underlying first electrically conductive structures 14A, 14B.

The first metal-containing cap layer 20L can be formed by a depositionprocess such as, for example, chemical vapor deposition (CVD), plasmaenhanced chemical deposition (PECVD), physical vapor deposition (PVD) oratomic layer deposition (ALD). In some embodiments, a planarizationprocess such as, for example, CMP and/or grinding, follows thedeposition step. At this junction of the present application, the firstmetal-containing cap layer 20L has a topmost surface which extends abovethe topmost surface of the first interconnect dielectric material layer10 as is shown, for example, in FIG. 4.

Referring now to FIG. 5, there is illustrated the exemplary structure ofFIG. 4 after removing the first metal-containing cap layer 20L from thetopmost surface of the first interconnect dielectric material layer 10,while maintaining a portion of the first metal-containing cap layer 20Lon the recessed surface 15 of the at least one first electricallyconductive structure 14A. The maintained portion of the firstmetal-containing cap layer 20L can be referred to herein as a firstmetal-containing cap 20. The removal of the first metal-containing caplayer 20L from the topmost surface of the first interconnect dielectricmaterial layer 10 can be performed utilizing a planarization processincluding, for example, chemical mechanical polishing (CMP) and/orgrinding. No first metal-containing cap 20 is present on the anotherfirst electrically conductive structure 14B.

The first metal-containing cap 20 has a convex bottom surface thatdirectly contacts the recessed surface 15 (i.e., concave upper surface)of the first electrically conductive structure 14A and a topmost surfacethat is coplanar with a topmost surface of the first interconnectdielectric material layer 10. The topmost surface of the firstmetal-containing cap 20 is planar.

Since the first metal-containing cap 20 is formed utilizing aplanarization process such as for example, chemical mechanical polishing(CMP), planarization impurities such as, for example, C impurities canbe introduced into an upper portion of the first metal-containing cap20. A planarization impurity is an unwanted element that is introducedinto an upper portion of a material following a planarization process.The unwanted element is a component of the planarization process itself.Interaction between the planarization introduced element (i.e.,impurities) and the later deposit metal containing layer 22 in FIG. 7will impact the final device performance. Another concern of theplanarization-finalized structure is the variation of the finalmetal-containing cap layer 20 thickness. Compared to control of lessthan 2 nm variation from most deposition techniques, control ofvariation from most planarization are above 10 nm.

Referring now to FIG. 6, there is illustrated the exemplary structure ofFIG. 5 after forming a second metal-containing cap layer 21L. The secondmetal-containing cap layer 21L is formed on physically exposed portionsof the topmost surface of the first interconnect dielectric materiallayer 10, the topmost surface of the first metal-containing cap 20, thetopmost surface of the another first electrically conductive structure14B, and, if present, the topmost surface of the diffusion barrier liner12L.

The second metal-containing cap layer 21L is composed of a metal suchas, for example, Ta, Ti, W, Co, Ru, or Rh, a metal nitride such as, forexample, TaN, TiN, WN, CoN, RuN or RhN, or alloys of said metals (e.g.,Ta and one of Ti, W, Co, Ru, or Rh; Ti and one of Ta, W, Co, Ru, or Rh;W and one of Ta, Ti, Co, Ru or Rh; Co and one of Ta, Ti, W, Ru or Rh; Ruand one of Ta, Ti, W, Co, or Rh; of Rh and one of Ta, Ti, W, Co, or Ru).In some embodiments, the second metal-containing cap layer 21L iscompositionally different from the first metal-containing cap layer 20L(and thus the first metal-containing cap 20) such that a materialinterface is present between the second metal-containing cap layer 21Land the first metal-containing cap 20. In other embodiments, themetal-containing cap layer 21L is compositionally the same as the firstmetal-containing cap layer 20L (and thus the first metal-containing cap20). In such an embodiment, no material interface exists between thesecond metal-containing cap layer 21L and the first metal-containing cap20.

The second metal-containing cap layer 21L can be formed by a depositionprocess such as, for example, chemical vapor deposition (CVD), plasmaenhanced chemical deposition (PECVD), physical vapor deposition (PVD) oratomic layer deposition (ALD). In accordance with the presentapplication, no CMP or like planarization process is performed on thesecond metal-containing cap layer 21L as such no planarizationimpurities such as, for example, C impurities, are introduced into anupper portion of the second metal-containing cap layer 21L. This allowsfor providing a planarization impurity free surface to the secondmetal-containing cap layer 21L in which a subsequently metal-containinglayer 22 can be formed.

Referring now to FIG. 7, there is illustrated the exemplary structure ofFIG. 6 after forming a metal-containing layer 22 on the secondmetal-containing cap layer 21L. The metal-containing layer 22 that isemployed in the present application is composed of at least one layer ofan electrically conductive metal-containing material. Themetal-containing layer 22 can be formed by depositing a layer of theelectrically conductive metal-containing material or depositing amaterial stack of electrically conductive metal-containing materials. Insome embodiments, the deposition of the metal-containing layer 22 occurswithin the same reactor chamber as the deposition of the secondmetal-containing cap layer 21L. In such an embodiment, a vacuum can bemaintained between the deposition of the second metal-containing caplayer 21L and the metal-containing layer 22.

It is noted that no planarization impurities are present at theinterface that is formed between the metal-containing layer 22 and thesecond metal-containing cap layer 21L. The absence of planarizationimpurities at the interface that is formed between the metal-containinglayer 22 and the second metal-containing cap layer 21L can provideinterconnect structures and memory structures that have improvedproperties such as, for example, lower contact resistance and tightermagnetic resistance distribution.

In one embodiment, the metal-containing layer 22 is composed of one ofthe electrically conductive metals or metal alloys as mentioned abovefor the first electrically conductive structure 14A, 14B. In anotherembodiment, the metal-containing layer 22 is composed of a stackincluding one of the electrically conductive metals or metal alloys asmentioned above for the first electrically conductive structure 14A,14B. In yet a further embodiment, the metal-containing layer 22 iscomposed of a memory stack that can be used as a non-volatile memorydevice such as, for example, a ferroelectric memory (FE) device, aresistive random access memory (ReRAM) device, a magnetoresistive randomaccess memory (MRAM) device, or a phase change random access memory(PRAM) device.

A FE memory device is a random access memory similar in construction toa DRAM by using a ferroelectric layer instead of a dielectric layer toachieved non-volatility. FE memory devices typically include a materialstack of, from bottom to top, a bottom electrode, a ferroelectric layer,and a top electrode. Thus, and in one embodiment of the presentapplication, the metal-containing layer 22 can be an electricallyconductive metal-containing material stack of a bottom electrode, aferroelectric layer, and a top electrode. The bottom and top electrodesmay be composed of a metal or metal nitride. For example, TiN may beused as the material for the bottom electrode and/or top electrode. Theferroelectric layer is composed of one or more ferroelectric materialsexhibiting ferroelectricity (i.e., a material that has a spontaneouselectric polarization that can be reversed by the application of anexternal electric field). Examples of ferroelectric materials that canbe used as the ferroelectric layer include, but at not limited to, mixedmetal oxides such as, BaTiO₃, Pb(Zr_(x)Ti_(1-x)]O₃ (0.1≤x≤1), orcrystalline HfO₂ with, or without, a doping element selected from Zr,Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, C, N, and Y.

A ReRAM device is a random access memory that typically includes amaterial stack of, from bottom to top, a bottom electrode, a metal oxidethat can exhibit a change in electron localization, and a top electrode.Thus, and in one embodiment of the present application, themetal-containing layer 22 can be an electrically conductivemetal-containing material stack of a bottom electrode, a ferroelectriclayer, and a top electrode. The bottom and top electrodes may becomposed of a metal or metal nitride. For example, TiN may be used asthe material for the bottom and/or top electrode. The metal oxide mayinclude oxides of nickel, zirconium, hafnium, iron, or copper.

A MRAM device is a random access memory that includes a magnetic tunneljunction (MTJ) structure. The magnetic tunnel junction (MTJ) structuremay include a magnetic reference layer, a tunnel barrier, and a magneticfree layer. The magnetic reference layer has a fixed magnetization. Themagnetic reference layer may be composed of a metal or metal alloy thatincludes one or more metals exhibiting high spin polarization. Inalternative embodiments, exemplary metals for the formation of themagnetic reference layer include iron, nickel, cobalt, chromium, boron,and manganese. Exemplary metal alloys may include the metals exemplifiedby the above. In another embodiment, the magnetic reference layer may bea multilayer arrangement having (1) a high spin polarization regionformed from of a metal and/or metal alloy using the metals mentionedabove, and (2) a region constructed of a material or materials thatexhibit strong perpendicular magnetic anisotropy (strong PMA). Exemplarymaterials with strong PMA that may be used include a metal such ascobalt, nickel, platinum, palladium, iridium, or ruthenium, and may bearranged as alternating layers. The strong PMA region may also includealloys that exhibit strong PMA, with exemplary alloys includingcobalt-iron-terbium, cobalt-iron-gadolinium, cobalt-chromium-platinum,cobalt-platinum, cobalt-palladium, iron-platinum, and/or iron-palladium.The alloys may be arranged as alternating layers. In one embodiment,combinations of these materials and regions may also be employed.

The tunnel barrier of the MTJ structure is composed of an insulatormaterial and is formed at such a thickness as to provide an appropriatetunneling resistance. Exemplary materials for the tunnel barrier includemagnesium oxide, aluminum oxide, and titanium oxide, or materials ofhigher electrical tunnel conductance, such as semiconductors orlow-bandgap insulators.

The magnetic free layer of the MTJ structure is composed of at least onemagnetic material with a magnetization that can be changed inorientation relative to the magnetization orientation of the referencelayer. Exemplary materials for the free layer of the MTJ structureinclude alloys and/or multilayers of cobalt, iron, alloys ofcobalt-iron, nickel, alloys of nickel-iron, and alloys ofcobalt-iron-boron.

A PRAM device is a random access memory that typically includes amaterial stack of, from bottom to top, a bottom electrode, a phasechange memory material that exhibits a change in atomic order (fromcrystalline to amorphous or vice versa), and a top electrode. Thus, andin one embodiment of the present application, the metal-containing layeris an electrically conductive metal-containing material stack of abottom electrode, a ferroelectric layer, and a top electrode. The bottomelectrode and top electrode may be composed of a metal or metal nitride.For example, TiN may be used as the material for the bottom and/or topelectrode. The phase change memory material may include a chalcogenideglass such as, for example, Ge₂Sb₂Te₅ or Ge₂Bi₂Te₆.

Referring now to FIG. 8, there is illustrated the exemplary structure ofFIG. 7 after patterning the metal-containing layer 22 and the secondmetal-containing cap layer 21L to provide a patterned structure thatincludes a remaining portion of the metal-containing layer 22(hereinafter “metal-containing structure”) and a remaining portion ofthe second metal-containing cap layer 21L (hereinafter second“metal-containing cap”) located on the first metal-containing cap 20that is present on the recessed surface 15 of the at least one firstelectrically conductive structure (e.g., first electrically conductivestructure 14A). In the embodiment illustrated in FIG. 8, a patternedstructure including metal-containing structure 22A and secondmetal-containing cap 21A is formed upon first metal-containing cap 20that is located on the recessed surface 15 (i.e., concave upper surface)of the first electrically conductive structure 14A, while anotherpatterned structure including metal-containing structure 22B and anothersecond metal-containing cap 21B is located on the planar topmost surfaceof the first electrically conductive structure 14B. In the presentapplication, both second metal-containing caps 21A, 21B have a planarbottommost surface and a planar topmost surface.

In the illustrated embodiment, the two patterned structures (i.e. 21A,22A and 21B, 22B) are spaced apart from each other. Each component ofthe patterned structures, i.e., the metal-containing structure and thesecond metal-containing cap has sidewall surfaces that are verticalaligned to each other.

The patterning of the patterning the metal-containing layer 22 and thesecond metal-containing cap layer 21L can include lithography andetching. The etching may include one or more metal etching process, suchas, for example, one or more reactive ion etching processes.

It is noted that the interface that is present between each metalcontaining structure (i.e., 22A or 22B) and an underlying secondmetal-containing cap (21A or 21B) lacks any planarization impuritiessuch as, for example, C impurities. Thus, the integrity of the interfacebetween the metal containing structures and the second metal-containingcap is maintained. Planarization impurities would however be present atthe interface between the first metal-containing cap 20 and the secondmetal-containing cap 21A.

As is shown in FIG. 8, the second metal-containing cap 21A has a planarbottommost surface that is in direct physical contact with a topmost(planar) surface of the first metal-containing cap 20 that is located onthe recessed surface 15 (i.e., concave upper surface) of the recessedfirst electrically conductive structure 14A. The metal-containingstructure 22A has a planar topmost surface and a planar bottommost thatis in direct physical contact with a planar topmost surface of thesecond metal-containing cap 21A. The another second metal-containing cap21B has a planar bottommost surface that is in direct physical contactwith the planar topmost surface of the non-recessed first electricallyconductive structure 14B. The metal-containing structure 22B has aplanar topmost surface and a planar bottommost that is in directphysical contact with the planar topmost surface of the another secondmetal-containing cap 21B.

As is further shown in FIG. 8, the planar topmost surface of secondmetal-containing cap 21A is coplanar with the planar topmost surface ofthe another second metal-containing cap 21B, the planar bottommostsurface of metal-containing structure 22A is coplanar with the planarbottommost surface of the another metal-containing structure 22B and theplanar topmost surface of metal-containing structure 22A is coplanarwith the planar topmost surface of the another metal-containingstructure 22B. Topography issues are thus circumvented in the exemplarystructure shown in FIG. 8.

Referring now to FIG. 9, there is illustrated the exemplary structure ofFIG. 8 after forming a second interconnect dielectric material layer 24laterally adjacent to, and atop, the patterned structure (21A, 22A and21B, 22B), and forming at least one second electrically conductivestructure 28A in the second interconnect dielectric material layer 24,wherein the at least one second electrically conductive structure 28Acontacts the patterned structure (21A, 22A) that is located on firstmetal-containing cap 20 that is present on the recessed surface 15 ofthe at least one first electrically conductive structure 14A. The secondinterconnect dielectric material layer 24 is also present on the firstinterconnect dielectric material layer 10.

The second interconnect dielectric material layer 24 includes one of thedielectric materials mentioned above for the first interconnectdielectric material layer 10. In one embodiment, the second interconnectdielectric material layer 24 may include a dielectric material that iscompositionally the same as the dielectric material that provides thefirst interconnect dielectric material layer 10. In another embodiment,the second interconnect dielectric material layer 24 may include adielectric material that is compositionally different from thedielectric material that provides the first interconnect dielectricmaterial layer 10. The second interconnect dielectric material layer 24can be formed utilizing one of the deposition processed mentioned abovefor forming the first interconnect dielectric material layer 10.

After forming the second interconnect dielectric material layer 24, atleast one opening (not shown) is formed into the second interconnectdielectric material layer 24. Each opening that is formed physicallyexposes one of patterned structures. The openings can be formed bylithography and etching. A second diffusion barrier material can then beformed into each of the openings that is formed into the secondinterconnect dielectric material layer 24. The second diffusion barriermaterial includes one of the diffusion barrier materials mentioned abovefor providing the first diffusion barrier liner 12L. The seconddiffusion barrier material may be compositionally the same as, orcompositionally different from the diffusion barrier material thatprovides the first diffusion barrier liner 12L. The second diffusionbarrier material can be formed utilizing one of the deposition processesmentioned above for forming the diffusion barrier material that providesthe first diffusion barrier liner 12L. The second diffusion barriermaterial can have a thickness within the range mentioned above for thediffusion barrier material that provides the first diffusion barrierliner 12L. In some embodiments, the second diffusion barrier materialcan be omitted.

In some embodiments, an optional plating seed layer (not specificallyshown) as defined above can be formed on the surface of the seconddiffusion barrier material. In some embodiments, the optional platingseed layer is not needed.

Next, a second electrically conductive metal or metal alloy is formedinto each opening and, if present, atop the second diffusion barriermaterial. The second electrically conductive metal or metal alloyprovides the second electrically conductive structures 28A, 28B includesone of the electrically conductive metals or metal alloys mentionedabove for providing the first electrically conductive structures 14A,14B. In one embodiment, the second electrically conductive metal ormetal alloy provides the second electrically conductive structures 28A,28B is compositionally the same as the electrically conductive metal ormetal alloy that provides the first electrically conductive structures14A, 14B. In another embodiment, the second electrically conductivemetal or metal alloy provides the second electrically conductivestructures 28A, 28B is compositionally different from the electricallyconductive metal or metal alloy that provides the first electricallyconductive structures 14A, 14B. The second electrically conductive metalor metal alloy can be formed utilizing a deposition process such as, forexample, CVD, PECVD, sputtering, chemical solution deposition orplating. In one embodiment, a bottom-up plating process is employed informing the electrically conductive metal or metal alloy. In someembodiments, the second electrically conductive metal or metal alloy isformed above the topmost surface of the second interconnect dielectricmaterial layer 24.

Following the deposition of the second electrically conductive metal ormetal alloy, a planarization process such as, for example, chemicalmechanical polishing (CMP) and/or grinding, can be used to remove allthe second electrically conductive metal or metal alloy (i.e.,overburden material) that is present outside each of the openingsforming the second electrically conductive structures 28A, 28B. Theplanarization stops on a topmost surface of the second interconnectdielectric material layer 24. Thus, and if present, the planarizationprocess also removes the second diffusion barrier material from thetopmost surface of the second interconnect dielectric material layer 24.The remaining portion of the second diffusion barrier material that ispresent in the at least one opening is referred to herein as the seconddiffusion barrier liner 26L, while the remaining second electricallyconductive metal or metal alloy that is present in the one opening maybe referred to as the second electrically conductive structure 28A, 28B.

Collectively, the second interconnect dielectric material layer 24, thesecond electrically conductive structures 28A, 28B, if present, thesecond diffusion barrier liner 26L provide an upper (or second)interconnect level, L_(n+1). The upper (or second) interconnect level,L_(n−1), embeds the second electrically conductive structures 28A, 28B,if present, the second diffusion barrier liner 26L, the metal-containingstructure 22A, 22B and the second metal-containing cap 21A, 21B therein.As shown, the topmost surface of the each second electrically conductivestructure 28A, 28B is coplanar with a topmost surface of the secondinterconnect dielectric material layer 24, and, if present, a topmostsurface of the second diffusion barrier liner 26L.

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A structure comprising: a first electricallyconductive structure having a concave upper surface embedded in a firstinterconnect dielectric material layer; a first metal-containing caphaving a convex bottom surface directly contacting the concave uppersurface of the first electrically conductive structure, wherein thefirst metal-containing cap has a topmost surface that is coplanar with atopmost surface of the first interconnect dielectric material layer; asecond metal-containing cap having a planar bottommost surface directlycontacting the topmost surface of the first metal-containing cap; ametal-containing structure having a planar bottommost surface directlycontacting a planar topmost surface of the second metal-containing cap;a second electrically conductive structure contacting a planar topmostsurface of the metal-containing structure; and a second interconnectdielectric material layer present on the first interconnect dielectricmaterial layer and located laterally adjacent to second metal-containingcap, the metal-containing structure, and the second electricallyconductive structure.
 2. The structure of claim 1, further comprising:at least one other first electrically conductive structure embedded inthe first interconnect dielectric material layer and laterally adjacentto the first electrically conductive structure, wherein the at least oneother first electrically conductive structure has a planar topmostsurface; at least one other second metal-containing cap having a planarbottom surface directly contacting the planar topmost surface of the atleast one other first electrically conductive structure; at least oneother metal-containing structure having a planar bottommost surfacedirectly contacting a planar topmost surface of the at least one othersecond metal-containing cap and a planar topmost surface; and at leastone other second electrically conductive structure contacting the planartopmost surface of the at least one other metal-containing structure andembedded in the second interconnect dielectric material layer.
 3. Thestructure of claim 2, wherein the planar topmost surface of the secondmetal-containing cap is coplanar with the planar topmost surface of theat least one other second metal-containing cap, the planar bottommostsurface of the metal-containing structure is coplanar with the planarbottommost surface of the at least one another metal-containingstructure, and the planar topmost surface of the metal-containingstructure is coplanar with the planar topmost surface of the at leastone another metal-containing structure.
 4. The structure of claim 1,wherein both the first metal-containing cap and the secondmetal-containing cap are composed of a metal, a metal nitride or alloysof at least two metals, wherein said metal is selected from the groupconsisting of Ta, Ti, W, Co, Ru, and Rh.
 5. The structure of claim 1,wherein the second metal-containing cap is compositionally differentfrom the first metal-containing cap.
 6. The structure of claim 1,wherein the metal-containing structure is composed of at least oneelectrically conductive metal-containing material or a stack ofelectrically conductive metal-containing materials.
 7. The structure ofclaim 1, wherein the metal-containing structure is composed of a memorystack.
 8. The structure of claim 7, wherein the memory stack comprises aferroelectric memory (FE) stack, a resistive random access memory(ReRAM) stack, a magnetoresistive random access memory (MRAM) stack, ora phase change random access memory (PRAM) stack.
 9. The structure ofclaim 1, wherein the metal-containing structure has outermost sidewallsthat are vertically aligned to outermost sidewalls of the secondmetal-containing cap.
 10. The structure of claim 1, wherein an interfacebetween the metal-containing structure and the second metal-containingcap lacks any planarization impurities, while an interface between thefirst metal-containing cap and the second metal-containing cap containsplanarization impurities.